Due to its inherent analog nature, the memristor can store information in a continuous form, being thus well-suited for compact multi-bit memory cell technology. In this context, threshold-type switching devices show great retention and switching speed but still poor controllability. To this end, in this work we use one-dimensional (1-D) networks of anti-serially connected threshold-type memristors as means to to create voltage-controlled ternary memristive switches. We demonstrate that the number of memristors and their polarity define the memristance corresponding to the different stored information. We present a simulation-based study of their performance using a threshold-type switching model of bipolar voltage-controlled memristors, and comment on the applied programming-pulse characteristics and the most important device-level properties.