In this paper we propose a novel Content Addressable Memory (CAM) cell, NEMsCAM, based on both Nano-electro-mechanical (NEM) switches and CMOS technologies. The memory component of the proposed CAM cell is designed with two complementary non-volatile NEM switches and located on top of the CMOS-based comparison component. As a use case for the NEMsCAM cell, we design first-level data and instruction Translation Lookaside Buffers (TLBs) with 16nm CMOS technology at 2GHz. The simulations show that the NEMsCAM TLB reduces the energy consumption per search operation (by 27%), write operation (by 41.9%) and standby mode (by 53.9%), and the area (by 40.5%) compared to a CMOS-only TLB with minimal performance overhead.

We thank all anonymous reviewers for their insightful comments. This work is supported in part by the European Union (FEDER funds) under contract TIN2012-34557, and the European Union’s Seventh Framework Programme (FP7/2007-2013) under the ParaDIME project (GA no. 318693)