Título:
|
Far-field narrowing in spatially modulated broad-area edge-emitting semiconductor amplifiers
|
Autor/a:
|
Radziunas, Mindaugas; Herrero Simon, Ramon; Botey Cumella, Muriel; Staliunas, Kestutis
|
Otros autores:
|
Universitat Politècnica de Catalunya. Departament de Física; Universitat Politècnica de Catalunya. DONLL - Dinàmica no Lineal, Òptica no Lineal i Làsers |
Abstract:
|
© 2015 [Optical Society of America]. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for
commercial purposes, or modifications of the content of this paper are prohibited. |
Abstract:
|
We perform a detailed theoretical analysis of the far-field narrowing in broad-area edge-emitting semiconductor amplifiers that are electrically injected through contacts periodically modulated in both longitudinal and transverse directions. The beam propagation properties within the semiconductor amplifier are explored by a (1 + 2)-dimensional traveling wave model and its coupled-mode approximation. Assuming a weak field regime, we analyze the impact of different parameters and modulation geometry on the narrowing of the principal far-field component. |
Abstract:
|
Peer Reviewed |
Materia(s):
|
-Àrees temàtiques de la UPC::Física -Àrees temàtiques de la UPC::Ciències de la visió::Òptica física -Power amplifiers -Lasers -spatiotemporal dynamics -beam-propagation -power-amplifiers -area lasers -feedback -simulation -NM -Amplificadors de potència -Làsers |
Derechos:
|
|
Tipo de documento:
|
Artículo - Versión presentada Artículo |
Compartir:
|
|