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dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Alay, Josep Lluís |
dc.contributor.author | Bender, H. |
dc.contributor.author | Vandervorst, Wilfried |
dc.date | 2012-10-08T13:02:55Z |
dc.date | 2012-10-08T13:02:55Z |
dc.date | 1995 |
dc.date | 2012-10-08T13:02:55Z |
dc.identifier.citation | 0021-8979 |
dc.identifier.citation | 109545 |
dc.identifier.uri | http://hdl.handle.net/2445/32223 |
dc.format | 13 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.358650 |
dc.relation | Journal of Applied Physics, 1995, vol. 77, num. 7, p. 3010-3022 |
dc.relation | http://dx.doi.org/10.1063/1.358650 |
dc.rights | (c) American Institute of Physics , 1995 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Semiconductors |
dc.subject | Microelectrònica |
dc.subject | Espectroscòpia d'electrons |
dc.subject | Semiconductors |
dc.subject | Microelectronics |
dc.subject | Electron spectroscopy |
dc.title | Ion-beam induced oxidation of GaAs and AlGaAs |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.description.abstract |