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Elastic tunneling charge transport mechanisms in silicon quantum dots / SiO2 thin films and superlattices
Illera Robles, Sergio; Prades García, Juan Daniel; Cirera Hernández, Albert
Universitat de Barcelona
The role of different charge transport mechanisms in Si /SiO2 structures has been studied. A theoretical model based on the Transfer Hamiltonian Formalism has been developed to explain experimental current trends in terms of three different elastic tunneling processes: (1) trap assisted tunneling; (2) transport through an intermediate quantum dot; and (3) direct tunneling between leads. In general, at low fields carrier transport is dominated by the quantum dots whereas, for moderate and high fields, transport through deep traps inherent to the SiO 2 is the most relevant process. Besides, current trends in Si /SiO2 superlattice structure have been properly reproduced.
Semiconductors
Teoria quàntica
Nanocristalls
Silici
Semiconductors
Quantum theory
Nanocrystals
Silicon
(c) American Institute of Physics , 2015
Article
info:eu-repo/semantics/publishedVersion
American Institute of Physics
         

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