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Statistical lifetime analysis of memristive crossbar matrix
Pouyan, Peyman; Amat, Esteve; Rubio Sola, Jose Antonio
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
Memristors are considered one of the most favorable emerging device alternatives for future memory technologies. They are attracting great attention recently, due to their high scalability and compatibility with CMOS fabrication process. Alongside their benefits, they also face reliability concerns (e.g. manufacturing variability). In this sense our work analyzes key sources of uncertainties in the operation of the memristive memory and we present an analytic approach to predict the expected lifetime distribution of a memristive crossbar.
Àrees temàtiques de la UPC::Enginyeria electrònica
Electric engineering
Memristor
Uncertainty
Crossbar
Endurance
Process variability
RRAM
Emerging device
Enginyeria elèctrica
Electrònica -- Materials
Circuits elèctrics
http://creativecommons.org/licenses/by-nc-nd/3.0/es/
info:eu-repo/semantics/publishedVersion
info:eu-repo/semantics/conferenceObject
Institute of Electrical and Electronics Engineers (IEEE)
         

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