Pespectives of TFET devices in ultra-low power charge pumps for thermo-electric energy sources

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dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.contributor.author	Nunes Cavalheiro, David Manuel
dc.contributor.author	Moll Echeto, Francisco de Borja
dc.contributor.author	Valtchev, Stanimir
dc.date	2015
dc.identifier.citation	Nunes, D., Moll, F., Valtchev, S. Pespectives of TFET devices in ultra-low power charge pumps for thermo-electric energy sources. A: IEEE International Symposium on Circuits and Systems. "2015 IEEE International Symposium on Circuits and Systems (ISCAS 2015): Lisbon, Portugal: 24-27 May 2015". Lisbon: Institute of Electrical and Electronics Engineers (IEEE), 2015, p. 1082-1085.
dc.identifier.citation	9781479983926
dc.identifier.citation	10.1109/ISCAS.2015.7168825
dc.identifier.uri	http://hdl.handle.net/2117/85307
dc.language.iso	eng
dc.publisher	Institute of Electrical and Electronics Engineers (IEEE)
dc.rights	info:eu-repo/semantics/openAccess
dc.rights	http://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subject	Àrees temàtiques de la UPC::Enginyeria electrònica
dc.subject	Àrees temàtiques de la UPC::Energies::Termoenergètica
dc.subject	Thermoelectricity
dc.subject	Nanoelectronics
dc.subject	Tunnel-FET
dc.subject	Energy Harvesting
dc.subject	Charge Pump
dc.subject	FinFET
dc.subject	Thermo-electric
dc.subject	Ultra-Low Power
dc.subject	Termoelectricitat
dc.title	Pespectives of TFET devices in ultra-low power charge pumps for thermo-electric energy sources
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/conferenceObject
dc.description.abstract	The superior electrical characteristics of the heterojunction III-V Tunnel FET (TFET) devices can outperform current technologies in the process of energy harvesting conversion at ultra-low power supply voltage operation (sub-0.25 V). In this work, it is shown by simulations that a cross-coupled switched-capacitor topology with GaSb-InAs TFET devices present better conversion performance compared to the use of Si FinFET technology at low temperature variations (¿T < 3 ºC) when considering a thermo-electric energy harvesting source (with a = 80 mV/K). At higher ¿T, the conversion process is degraded with the increase of the transistor losses. Considering a ¿T of 1 ºC (2 ºC), one cross-coupled stage with TFET devices can achieve 74 % (69 %) of power conversion efficiency when considering an output load of 0.4 µA (6 µA). At the same conditions, the FinFET charge pump is shown inefficient.

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