Characterization of linear-mode avalanche photodiodes in standard CMOS

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Title:	Characterization of linear-mode avalanche photodiodes in standard CMOS
Author:	Vilella Figueras, Eva; Vilà i Arbonès, Anna Maria; Palacio, Fernando; López de Miguel, Manuel; Diéguez Barrientos, Àngel
Other authors:	Universitat de Barcelona
Abstract:	Linear-mode Avalanche PhotoDiodes (APDs) can be fabricated in standard CMOS processes for obtaining high multiplication gains that allow to determine the number of incident photons with great precision. This idea can be exploited in several application domains, such as image sensors, optical communications and quantum information. In this work, we present a linear-mode APD fabricated in a 0.35 µm CMOS process and report its noise and gain characterization by means of two different experimental set-ups. Good matching is observed between the results obtained by means of the two different methods.
Subject(s):	-Metall-òxid-semiconductors complementaris -Col·lisions (Física nuclear) -Circuits electrònics -Complementary metal oxide semiconductors -Collisions (Nuclear physics) -Electronic circuits
Rights:	cc-by-nc-nd (c) Vilella Figueras, Eva et al., 2014 http://creativecommons.org/licenses/by-nc-nd/3.0/es
Document type:	Article Article - Published version
Published by:	Elsevier
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