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dc.contributor | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
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dc.contributor | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.contributor.author | Shijeesh, Methattel R. |
dc.contributor.author | Vikas, L. S. |
dc.contributor.author | Jayaraj, M. K. |
dc.contributor.author | Puigdollers i González, Joaquim |
dc.date | 2014-07-14 |
dc.identifier.citation | Shijeesh, M., Vikas, L., Jayaraj, M., Puigdollers, J. Degradation study and calculation of density-of-states in PTCDI-C8 channel layer from the electrical characteristics of thin-film transistors. "Journal of applied physics", 14 Juliol 2014, p. 024507-1-024507-5. |
dc.identifier.citation | 0021-8979 |
dc.identifier.citation | 10.1063/1.4890023 |
dc.identifier.uri | http://hdl.handle.net/2117/76199 |
dc.language.iso | eng |
dc.publisher | American Institute of Physics (AIP) |
dc.relation | http://scitation.aip.org/content/aip/journal/jap/116/2/10.1063/1.4890023 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.rights | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
dc.subject | Àrees temàtiques de la UPC::Física |
dc.subject | Semiconductors |
dc.subject | Semiconductors |
dc.title | Degradation study and calculation of density-of-states in PTCDI-C8 channel layer from the electrical characteristics of thin-film transistors |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.type | info:eu-repo/semantics/article |
dc.description.abstract | |
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