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Radio-Frequency Performance of Carbon Nanotube-Based Devices and Circuits Considering Noise and Process Variation
Landauer, Gerhard Martin; Gonzalez Jimenez, Jose Luis
Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
This paper provides a global overview of the radiofrequency (RF) performance potential of carbon-nanotube field-effect transistors (CNFET), which for the first time includes the impact of noise. We develop noise and manufacturing process variability extensions for the Stanford CNFET compact model, implemented in Verilog-A and compatible with conventional circuit simulators. CNFET figures-of-merit (FoM) are determined both on the device and on the circuit level. Compared to silicon technology, CNFET devices show much better performance in terms of most of the RF-CMOS requirements of the International Technology Roadmap for Semiconductors. FoM projections for basic RF building blocks (low-noise amplifier and oscillator) show that good performance can already be obtained with simple circuit topologies. The main advantage of CNFET circuits yet lies in easily reaching operation frequencies of several hundreds of gigahertz, which are hard to be exploited by silicon technologies at similar technology nodes.
Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica
Radio frequency
Carbon nanotube (CNT)
carbon-nanotube field-effect transistor (CNFET)
noise model
performance benchmarking
process variability
radio frequency (RF)
FIELD-EFFECT TRANSISTORS
COMPACT SPICE MODEL
INCLUDING NONIDEALITIES
CMOS TECHNOLOGY
PART II
ELECTRONICS
FETS
VCO
Radiofreqüència
Attribution-NonCommercial-NoDerivs 3.0 Spain
http://creativecommons.org/licenses/by-nc-nd/3.0/es/
info:eu-repo/semantics/publishedVersion
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