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Variability and reliability analysis of CNFET technology: Impact of manufacturing imperfections
Almudever, Carmen G.; Rubio Sola, Jose Antonio
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
Carbon nanotube field-effect transistors (CNFETs) are promising candidates to substitute silicon transistors. Boasting extraordinary electronic properties, CNFETs exhibit characteristics rivaling those of state-of-the-art Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). However, as any technology that is in development, CNFET fabrication process still have some imperfections that results in carbon nanotube variations, which can have a severe impact on the devices' performance and jeopardize their reliability (in this work the term reliability means time-zero failure due to manufacturing variations). This paper presents a study of the effects on transistors of the main CNFET manufacturing imperfections, including the presence of metallic carbon nanotubes (m-CNTs), imperfect m-CNT removal processes, chirality drift, CNT doping variations in the source/drain extension regions, and density fluctuations due to non-uniform inter-CNT spacing.
Peer Reviewed
Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats
Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
Nanotubes -- Reliability
Carbon nanotube field-effect transistors (CNFETs)
Carbon nanotubes (CNTs)
CNFET manufacturing imperfections
CNFET variability and reliability
Nanotubs -- Fiabilitat

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