Characterization of random telegraph noise and its impact on reliability of SRAM sense amplifiers

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dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.contributor.author	Martín Martínez, Javier
dc.contributor.author	Diaz, Javier
dc.contributor.author	Rodríguez, Rosana
dc.contributor.author	Nafria, Montse
dc.contributor.author	Aymerich Humet, Xavier
dc.contributor.author	Roca Moreno, Elisenda
dc.contributor.author	Fernández Fernández, Francisco V.
dc.contributor.author	Rubio Sola, Jose Antonio
dc.date	2014
dc.identifier.citation	Martín, J. [et al.]. Characterization of random telegraph noise and its impact on reliability of SRAM sense amplifiers. A: European Workshop on CMOS Variability. "2014 5th European Workshop on CMOS Variability (VARI)". Palma Mallorca, Illes Balears: Institute of Electrical and Electronics Engineers (IEEE), 2014, p. 1-6.
dc.identifier.citation	978-1-4799-5399-8
dc.identifier.citation	10.1109/VARI.2014.6957088
dc.identifier.uri	http://hdl.handle.net/2117/27058
dc.language.iso	eng
dc.publisher	Institute of Electrical and Electronics Engineers (IEEE)
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors
dc.subject	Transistors
dc.subject	Random Telegraph Noise
dc.subject	CMOS
dc.subject	parameter extraction
dc.subject	characterization
dc.subject	Reliability
dc.subject	sense amplifiers
dc.subject	Transistors
dc.title	Characterization of random telegraph noise and its impact on reliability of SRAM sense amplifiers
dc.type	info:eu-repo/semantics/submittedVersion
dc.type	info:eu-repo/semantics/conferenceObject
dc.description.abstract	A new method for the analysis of multilevel Random Telegraph Noise (RTN) signals has been recently presented, which can also be applied in the case of large background noise. In this work, the method is extended to evaluate the RTN-related variation of the device drain current. The RTN parameters obtained from experimental traces are used to simulate the impact of RTN in the drain current of pMOS transistors in SRAM voltage sense amplifiers. The results show that RTN can lead to read errors of the stored data.

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