A dual-band outphasing transmitter using broadband class E power amplifiers

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To access the full text documents, please follow this link: http://hdl.handle.net/2117/26377

dc.contributor	Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
dc.contributor	Universitat Politècnica de Catalunya. CMC - Control, Monitorització i Comunicacions
dc.contributor.author	Ruiz, Maria Nieves
dc.contributor.author	Marante, Reinel
dc.contributor.author	Rizo, Leysi
dc.contributor.author	García, José Angel
dc.contributor.author	Gilabert Pinal, Pere Lluís
dc.contributor.author	Montoro López, Gabriel
dc.date	2014
dc.identifier.citation	Ruiz, M. N. [et al.]. A dual-band outphasing transmitter using broadband class E power amplifiers. A: International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits. "Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), 2014 International Workshop on". Leuven: 2014, p. 1-4.
dc.identifier.citation	10.1109/INMMIC.2014.6815087
dc.identifier.uri	http://hdl.handle.net/2117/26377
dc.language.iso	eng
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Enginyeria electrònica
dc.subject	Power amplifiers
dc.subject	Chireix
dc.subject	Class E
dc.subject	Efficiency
dc.subject	GaN HEMT
dc.subject	Power amplifier
dc.subject	Outphasing transmitter
dc.subject	Amplificadors de potència
dc.title	A dual-band outphasing transmitter using broadband class E power amplifiers
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/conferenceObject
dc.description.abstract	In this paper, a dual-band outphasing transmitter (able of operating either at 770 MHz or 960 MHz frequency bands) is presented. Two broadband RF power amplifiers (PAs) have been designed over packaged GaN HEMT devices, switching close to the nominal zero-voltage and zerovoltage-derivative class E conditions. A reactive combiner, using transmission lines of appropriate electrical lengths at both bands, together with compensating reactances, allows positioning the drain impedance loci to produce high efficiency and good dynamic range profiles. Average drain efficiency figures over 68% and 38% have been measured for WCDMA signals with a peak-to-average power ratio (PAPR) of 5.1 dB and 8.4 dB, respectively.
dc.description.abstract	Peer Reviewed

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