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A dual-band outphasing transmitter using broadband class E power amplifiers
Ruiz, Maria Nieves; Marante, Reinel; Rizo, Leysi; García, José Angel; Gilabert Pinal, Pere Lluís; Montoro López, Gabriel
Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions; Universitat Politècnica de Catalunya. CMC - Control, Monitorització i Comunicacions
In this paper, a dual-band outphasing transmitter (able of operating either at 770 MHz or 960 MHz frequency bands) is presented. Two broadband RF power amplifiers (PAs) have been designed over packaged GaN HEMT devices, switching close to the nominal zero-voltage and zerovoltage-derivative class E conditions. A reactive combiner, using transmission lines of appropriate electrical lengths at both bands, together with compensating reactances, allows positioning the drain impedance loci to produce high efficiency and good dynamic range profiles. Average drain efficiency figures over 68% and 38% have been measured for WCDMA signals with a peak-to-average power ratio (PAPR) of 5.1 dB and 8.4 dB, respectively.
Peer Reviewed
Àrees temàtiques de la UPC::Enginyeria electrònica
Power amplifiers
Chireix
Class E
Efficiency
GaN HEMT
Power amplifier
Outphasing transmitter
Amplificadors de potència
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