Shape effects on electromigration in VLSI interconnects

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Title:	Shape effects on electromigration in VLSI interconnects
Author:	González Jiménez, José Luis; Rubio Sola, Jose Antonio
Other authors:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
Abstract:	The influence of the shape of VLSI interconnects on the lifetime due to electromigration is investigated. Simulations and experiments indicate that, in some cases, the right angle corners of the metal lines, widely interconnections layout of VLSI circuits, reduce the lifetime of such interconnects. Substitutions by more gradual, smaller angled corners improve electromigration lifetimes.
Abstract:	Peer Reviewed
Subject(s):	-Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats -Linear integrated circuits -Circuits integrats lineals
Rights:	Attribution-NonCommercial-NoDerivs 3.0 Spain http://creativecommons.org/licenses/by-nc-nd/3.0/es/
Document type:	Article - Published version Article
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