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Temperature as observable magnitude in silicon integrated circuits to characterize high frequency analog circuits
Mateo Peña, Diego; Altet Sanahujes, Josep; Gómez Salinas, Dídac; Aragonès Cervera, Xavier
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
This paper introduces a novel on-chip measurement technique for the determination of the central frequency and 3dB bandwidth of a 60GHz power amplifier (PA) by performing low frequency temperature measurements in silicon integrated circuits. The techniques is implemented by using a temperature sensor embedded in the same silicon die as the PA, and placed in empty spaces next to it. Results confirm that temperature sensors can be used as functional built-in testers which serve to reduce testing costs and enhance yield as part of self-healing strategies.
Peer Reviewed
Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats
Materials -- Congresses
Integrated circuits
Silicon temperature measurement
CMOS millimeter wave integrated circuits
Design for Testability
Materials -- Congressos
Circuits integrats
Attribution-NonCommercial-NoDerivs 3.0 Spain
http://creativecommons.org/licenses/by-nc-nd/3.0/es/
info:eu-repo/semantics/publishedVersion
info:eu-repo/semantics/conferenceObject
         

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