Título:
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DopLaCell: a new c-Si solar cell based on laser processing of dielectric films
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Autor/a:
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Martín García, Isidro; López González, Juan Miguel; Colina Brito, Mónica Alejandra; Orpella García, Alberto; Alcubilla González, Ramón
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Otros autores:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
Abstract:
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In this paper we introduce a new crystalline silicon (c-Si) solar cell fabrication technology based on the
laser processing of dielectric films to create all the highly-doped regions. We call it DopLaCell (Doped by Laser Cell)
structure. The resulting fabrication process can be simplified to just four steps: wafer cleaning, film depositions, laser
processing and metallization. We used phosphorus-doped silicon carbide stacks (SiCx(n)) and aluminium oxide/silicon
carbide (Al2O3/SiCx) stacks for the creation of n+ and p+ regions respectively. As a proof of concept, 1x1 cm2 solar cells
were fabricated on 0.45 Wcm p-type substrates with promising results. The main feature of DopLaCell structure is the
location of the emitter at the rear surface consisting of a point-like laser processed n+ regions combined with an induced
inversion layer in between based on the fixed charge density of the SiCx(n) stacks. Solar cells with distance between rear
emitter regions or pitch ranging from 200 to 350 μm are characterized resulting in a strong decrease of Fill Factor (FF)
from 75.4 to 59.7 %. Suns-Voc measurements show excellent pseudo-FF (p-FF) values beyond 81% in all devices
demonstrating the high quality of laser doping process and the actual limitation of FF by ohmic losses. Device modelling
through 3D simulations demonstrates that these ohmic losses are related to the high sheet resistance of the inversion layer
induced in-between n+ regions. We conclude that there is room for improvement to fully develop the potential of this new
structure, particularly for low resistivity n-type substrates where the high fixed charge densities of Al2O3 can help to
improve FF. |
Abstract:
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Peer Reviewed |
Materia(s):
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-Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars -Solar cells -Solar energy -Inversion layer emitters -Laser processing -Simulation -c-Si solar cells -Cèl·lules solars -Energia solar |
Derechos:
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Attribution-NonCommercial-NoDerivs 3.0 Spain
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
Tipo de documento:
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Artículo - Versión publicada Objeto de conferencia |
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