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Restraints in low dimensional organic semiconductor devices at high current densities
Pfattner, Raphael; Moreno Sierra, César; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Rovira, Concepció; Puigdollers i González, Joaquim; Mas Torrent, Marta
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
The understanding of the charge carrier transport in electronic materials is of crucial interest for the design of efficient devices including especially the restraints that arise from device miniaturization. In this work the performance of organic thin-film and single crystal field-effect transistors with the same active material was studied in detail focusing on the high current density regime, where a pronounced non-hysteretic maximum in the transconductance was found. Interestingly, in this operation mode for both, thin films and single crystals, comparable densities of free and gate-induced charge carriers were estimated. Kelvin probe microscopy was used to measure the contact potential difference and the electrical field along the transistor channel during device operation exhibiting the formation of local space charges in the high current density regime.
Peer Reviewed
Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Electrònica molecular
Molecular electronics
Electronic apparatus and appliances
High current densities
Kelvin probe microscopy
Organic field-effect transistor
Space charges
Transconductance
Electrònica molecular
Electrònica -- Materials
Attribution-NonCommercial-NoDerivs 3.0 Spain
http://creativecommons.org/licenses/by-nc-nd/3.0/es/
info:eu-repo/semantics/publishedVersion
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