Analyzing stability concerns in the presence of variations in Subthreshold SRAM

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Título:	Analyzing stability concerns in the presence of variations in Subthreshold SRAM
Autor/a:	Rana, Manish
Otros autores:	Universitat Politècnica de Catalunya. Departament d'Arquitectura de Computadors; Canal Corretger, Ramon
Abstract:	In this work, we analyse the stability of the SRAM bitcells when operating in subthreshold supply voltages.We propose a new bit cell with higher stability than 6T Bitcell,that is able to discharge the bit lines in 41% less time than the 6T as it's discharge path is only of single transistor.
Materia(s):	-Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats -Integrated circuits -Subliminals -inversió feble -SRAM Bit de cèl · lules -marge de soroll estàtic -N-corba -variacions del procés -Subthreshold -Weak Inversion -SRAM Bit-cell -Static Noise Margin -N-curve -Process Variations -Circuits integrats
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Tipo de documento:	Trabajo fin de máster
Editor:	Universitat Politècnica de Catalunya
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Rana, Manish; Canal Corretger, Ramon

Rana, Manish; Canal Corretger, Ramon; Amat Bertran, Esteve; Rubio Sola, Jose Antonio

Rana, Manish; Canal Corretger, Ramon

Rana, Manish; Canal Corretger, Ramon; Amat Bertran, Esteve; Rubio Sola, Jose Antonio

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