Reliability study on technology trends beyond 20nm

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Title:	Reliability study on technology trends beyond 20nm
Author:	Amat Bertran, Esteve; Calomarde Palomino, Antonio; Rubio Sola, Jose Antonio
Other authors:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
Abstract:	In this work, an assessment of different technology trends (planar CMOS, FinFET and III-V MOSFETs) has been carried out in front of some different reliability scenarios (variability and soft errors). The logic circuits based on FinFET devices have presented the best overall behavior, since we have obtained the best performance and variability robustness. Meanwhile, the III-V/Ge-based circuits have shown the best electrical masking in front of soft errors disturbances.
Subject(s):	-Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics -Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats -Semiconductors -Semiconductors
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Document type:	Article - Published version Conference Object
Published by:	Lodz University of Technology
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