Título:
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A very low distortion high efficiency class-F power amplifier at 900 MHz.
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Autor/a:
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Gilasgar, Mitra; Barlabe Dalmau, Antoni; Pradell i Cara, Lluís
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Otros autores:
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Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions; Universitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones |
Abstract:
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This paper presents a
novel
class
-
F power amplifier
for mobile applications in which with a proper harmonic tuning
structure the need f
or
an
extra fil
tering section is eliminated
. A
class
-
F power
a
mplifier
employing a GaN HEMT device
has
been designed, fabricated and measured
at
900
MHz
. The
fabricated circuit
achieves a
n
excel
lent harmonic
-
suppression
level
and
the
t
otal
h
armonic
distortion
is around
1.2%
. It
overcomes the narrow band performance of class
-
F
power
amplifier
s,
giving
more than 70%
efficiency
over
a
100
MHz
bandwidth
. Experimental results show that the
amplifier is able
to deliver 38.5
dBm
output
power
while
achieving the state
-
of
-
the
-
art
PAE
of 8
0.5
%
with
a peak
drain eff
iciency of
8
4
%
,
and
a
power gain of
13.6
dB
for
an
input power of 25
dBm
. A good
agreement between measurement and simulation results is observed for the proposed structure. |
Abstract:
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Peer Reviewed |
Materia(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència -Power amplifiers -Electric current converters -Amplificadors de potència -Convertidors de corrent elèctric |
Derechos:
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Tipo de documento:
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Artículo - Versión publicada Objeto de conferencia |
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