Domain matched epitaxial growth of Bi1.5Zn1Nb1.5O7 thin films by pulsed laser deposition

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RECERCAT Home > Universitat de Barcelona > Física Aplicada > Articles publicats en revistes (Física Aplicada) > View document

To access the full text documents, please follow this link: http://hdl.handle.net/2445/48334

dc.contributor	Universitat de Barcelona
dc.contributor.author	Krishnaprasad, P. S.
dc.contributor.author	Antony, Aldrin
dc.contributor.author	Rojas Tarazona, Fredy Enrique
dc.contributor.author	Bertomeu i Balagueró, Joan
dc.contributor.author	Jayaraj, M. K.
dc.date	2013-12-05T11:10:57Z
dc.date	2013-12-05T11:10:57Z
dc.date	2014-02-15
dc.date	2013-12-05T11:10:57Z
dc.identifier.citation	0925-8388
dc.identifier.citation	628947
dc.identifier.uri	http://hdl.handle.net/2445/48334
dc.format	24 p.
dc.format	application/pdf
dc.language.iso	eng
dc.publisher	Elsevier B.V.
dc.relation	Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.jallcom.2013.10.025
dc.relation	Journal of Alloys and Compounds, 2014, vol. 586, p. 524-528
dc.relation	http://dx.doi.org/10.1016/j.jallcom.2013.10.025
dc.rights	(c) Elsevier B.V., 2014
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Pel·lícules fines
dc.subject	Microelectrònica
dc.subject	Làsers
dc.subject	Semiconductors
dc.subject	Microscòpia electrònica de transmissió
dc.subject	Optoelectrònica
dc.subject	Difracció de raigs X
dc.subject	Metalls
dc.subject	Ceràmiques electròniques
dc.subject	Thin films
dc.subject	Microelectronics
dc.subject	Lasers
dc.subject	Semiconductors
dc.subject	Transmission electron microscopy
dc.subject	Optoelectronics
dc.subject	X-rays diffraction
dc.subject	Metals
dc.subject	Electronic ceramics
dc.title	Domain matched epitaxial growth of Bi1.5Zn1Nb1.5O7 thin films by pulsed laser deposition
dc.type	info:eu-repo/semantics/article
dc.type	info:eu-repo/semantics/acceptedVersion
dc.description.abstract	Bi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were grown by pulsed laser deposition on Al2O3 with a double ZnO buffer layer through domain matching epitaxy (DME) mechanism. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The pole figure analysis also shows a 60º twinning for the (222) oriented crystals. Sharp intense spots in the SAED pattern also indicate the high crystalline nature of BZN thin film. The Fourier filtered HRTEM images of the BZN-ZnO interface confirms the domain matched epitaxy of BZN with ZnO buffer. An electric field dependent dielectric tunability of 68% was obtained for the BZN thin films with inter digital capacitors patterned over the film.

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