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Domain matched epitaxial growth of Bi1.5Zn1Nb1.5O7 thin films by pulsed laser deposition
Krishnaprasad, P. S.; Antony, Aldrin; Rojas Tarazona, Fredy Enrique; Bertomeu i Balagueró, Joan; Jayaraj, M. K.
Universitat de Barcelona
Bi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were grown by pulsed laser deposition on Al2O3 with a double ZnO buffer layer through domain matching epitaxy (DME) mechanism. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The pole figure analysis also shows a 60º twinning for the (222) oriented crystals. Sharp intense spots in the SAED pattern also indicate the high crystalline nature of BZN thin film. The Fourier filtered HRTEM images of the BZN-ZnO interface confirms the domain matched epitaxy of BZN with ZnO buffer. An electric field dependent dielectric tunability of 68% was obtained for the BZN thin films with inter digital capacitors patterned over the film.
Pel·lícules fines
Microelectrònica
Làsers
Semiconductors
Microscòpia electrònica de transmissió
Optoelectrònica
Difracció de raigs X
Metalls
Ceràmiques electròniques
Thin films
Microelectronics
Lasers
Semiconductors
Transmission electron microscopy
Optoelectronics
X-rays diffraction
Metals
Electronic ceramics
(c) Elsevier B.V., 2014
Article
info:eu-repo/semantics/acceptedVersion
Elsevier B.V.
         

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