Effect of driver to gate coupling circuits on EMI produced by SiC MOSFETS

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To access the full text documents, please follow this link: http://hdl.handle.net/2117/20758

dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. TIEG - Terrassa Industrial Electronics Group
dc.contributor.author	Balcells Sendra, Josep
dc.contributor.author	Bogónez Franco, Francisco
dc.date	2013
dc.identifier.citation	Balcells, J.; Bogonez, F. Effect of driver to gate coupling circuits on EMI produced by SiC MOSFETS. A: International Symposium on Electromagnetic Compatibility. "Proceedings of the 2013 International Symposium on Electromagnetic Compatibility.". Brugge: Institute of Electrical and Electronics Engineers (IEEE), 2013, p. 209-214.
dc.identifier.citation	978-1-4673-4979-6
dc.identifier.citation	IEEE Catalog Number CFP1306F-USB, ISBN 978-1-4673-4979-6
dc.identifier.uri	http://hdl.handle.net/2117/20758
dc.language.iso	eng
dc.publisher	Institute of Electrical and Electronics Engineers (IEEE)
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència
dc.subject	Electromagnetic compatibility
dc.subject	SiC
dc.subject	EMI
dc.subject	conducted EMI
dc.subject	radiated EMI
dc.subject	Power converters
dc.subject	Compatibilitat electromagnètica
dc.title	Effect of driver to gate coupling circuits on EMI produced by SiC MOSFETS
dc.type	info:eu-repo/semantics/submittedVersion
dc.type	info:eu-repo/semantics/conferenceObject
dc.description.abstract	This work presents a study of the influence of different gate driver circuits on the switching behavior and EMI produced by SiC MOSFET devices used in a boost converter. The paper includes several simulations of switching behavior using different VGS voltage levels and different passive RCD (Resistance Capacitor Diode) circuits to interface the driver to the SiC MOS gate and several tests of conducted and radiated EMI for each one of the interface circuits. The paper also includes a comparison of both aspects (switching and EMI) when using different gate voltage levels. The study reveals that gate voltage has little impact on switching behavior and therefore on conducted and radiated EMI, while gate RCD coupling circuits have a noticeable impact. The EMI reduction, when using the adequate driver-gate circuit may be in the order of 10 dB at certain frequencies in the conducted band and up to 20 dB for certain frequencies in the radiated band.

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