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dc.contributor | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
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dc.contributor | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.contributor.author | Galiana, Beatriz |
dc.contributor.author | Silvestre Bergés, Santiago |
dc.contributor.author | Algora, C. |
dc.contributor.author | Rey-Stolle, I |
dc.date | 2013-10 |
dc.identifier.citation | Galiana, B. [et al.]. Effect of annealing atmosphere in the properties of GaAs layers deposited by sputtering techniques on Si substrates. "Journal of materials science. Materials in electronics", Octubre 2013, núm. October 2013, p. 1-5. |
dc.identifier.citation | 0957-4522 |
dc.identifier.citation | 10.1007/s10854-013-1562-y |
dc.identifier.uri | http://hdl.handle.net/2117/20627 |
dc.language.iso | eng |
dc.relation | http://link.springer.com/article/10.1007%2Fs10854-013-1562-y |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 Spain |
dc.rights | info:eu-repo/semantics/openAccess |
dc.rights | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
dc.subject | Àrees temàtiques de la UPC::Energies |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica |
dc.subject | Electronic engineering |
dc.subject | Telecomunication |
dc.subject | Optical and Electronic Materials |
dc.subject | Characterization and Evaluation of Materials |
dc.subject | Telecomunicació |
dc.subject | Electrònica |
dc.title | Effect of annealing atmosphere in the properties of GaAs layers deposited by sputtering techniques on Si substrates |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.type | info:eu-repo/semantics/article |
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