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dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Bertomeu i Balagueró, Joan |
dc.contributor.author | Puigdollers i González, Joaquim |
dc.contributor.author | Asensi López, José Miguel |
dc.contributor.author | Andreu i Batallé, Jordi |
dc.date | 2013-11-05T12:53:27Z |
dc.date | 2013-11-05T12:53:27Z |
dc.date | 1993 |
dc.date | 2013-11-05T12:53:27Z |
dc.identifier.citation | 0022-3093 |
dc.identifier.citation | 088431 |
dc.identifier.uri | http://hdl.handle.net/2445/47504 |
dc.format | 6 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | Elsevier B.V. |
dc.relation | Versió postprint del document publicat a: http://dx.doi.org/10.1016/0022-3093(93)91133-N |
dc.relation | Journal of non-Crystalline Solids, 1993, vol. 164-166, num. 2, p. 861-864 |
dc.relation | http://dx.doi.org/10.1016/0022-3093(93)91133-N |
dc.rights | (c) Elsevier B.V., 1993 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Semiconductors amorfs |
dc.subject | Optoelectrònica |
dc.subject | Espectroscòpia |
dc.subject | Silici |
dc.subject | Semimetalls |
dc.subject | Amorphous semiconductors |
dc.subject | Optoelectronics |
dc.subject | Spectrum analysis |
dc.subject | Silicon |
dc.subject | Semimetals |
dc.title | On the determination of the interface density of states in a-Si:H/a-SiC:H multilayers |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/acceptedVersion |
dc.description.abstract |