Para acceder a los documentos con el texto completo, por favor, siga el siguiente enlace: http://hdl.handle.net/2445/47504
Título:
|
On the determination of the interface density of states in a-Si:H/a-SiC:H multilayers
|
Autor/a:
|
Bertomeu i Balagueró, Joan; Puigdollers i González, Joaquim; Asensi López, José Miguel; Andreu i Batallé, Jordi
|
Otros autores:
|
Universitat de Barcelona |
Abstract:
|
This paper deals with the determination of the interface density of states in amorphous silicon-based multilayers. Photothermal deflection spectroscopy is used to characterize two series of aSi:H/aSi1-xCx:H multilayers, and a new approach in the treatment of experimental dada is used in order to obtain accurate results. From this approach, an upper limit of 10^10 cm-2 is determined for the interface density of states. |
Materia(s):
|
-Semiconductors amorfs -Optoelectrònica -Espectroscòpia -Silici -Semimetalls -Amorphous semiconductors -Optoelectronics -Spectrum analysis -Silicon -Semimetals |
Derechos:
|
(c) Elsevier B.V., 1993
|
Tipo de documento:
|
Artículo Artículo - Versión aceptada |
Editor:
|
Elsevier B.V.
|
Compartir:
|
|
Mostrar el registro completo del ítem