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dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Stöger, M. |
dc.contributor.author | Breymesser, A. |
dc.contributor.author | Schlosser, V. |
dc.contributor.author | Ramadori, M. |
dc.contributor.author | Plunger, V. |
dc.contributor.author | Peiró, D. |
dc.contributor.author | Voz Sánchez, Cristóbal |
dc.contributor.author | Bertomeu i Balagueró, Joan |
dc.contributor.author | Nelhiebel, M. |
dc.contributor.author | Schattschneider, P. |
dc.contributor.author | Andreu i Batallé, Jordi |
dc.date | 2013-10-31T12:03:46Z |
dc.date | 2013-10-31T12:03:46Z |
dc.date | 1999 |
dc.date | 2013-10-31T12:03:46Z |
dc.identifier.citation | 0921-4526 |
dc.identifier.citation | 147811 |
dc.identifier.uri | http://hdl.handle.net/2445/47422 |
dc.format | 6 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | Elsevier B.V. |
dc.relation | Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0921-4526(99)00568-2 |
dc.relation | Physica B, 1999, vol. 273-274, p. 540-543 |
dc.relation | http://dx.doi.org/10.1016/S0921-4526(99)00568-2 |
dc.rights | (c) Elsevier B.V., 1999 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Silici |
dc.subject | Deposició química en fase vapor |
dc.subject | Microscòpia electrònica de transmissió |
dc.subject | Potenciometria |
dc.subject | Nanotecnologia |
dc.subject | Silicon |
dc.subject | Chemical vapor deposition |
dc.subject | Transmission electron microscopy |
dc.subject | Potentiometry |
dc.subject | Nanotechnology |
dc.title | Investigation of defect formation and electronic transport in microcrystalline silicon deposited by hot-wire CVD |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/acceptedVersion |
dc.description.abstract |