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A Highly time sensitive XOR gate for probe attempt detectors
Manich Bou, Salvador; Strasser, Martin
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. QINE - Disseny de Baix Consum, Test, Verificació i Tolerància a Fallades
Probe attempt detectors are sensors designed to protect buses of secure chips against the physical contact of probes. The operation principle of these detectors relies on the comparison of the delay propagation times between lines. CMOS XOR gates are very well suited for this comparison since they are small, fast, and compatible with the technology used in secure chips. However, the lack of activity while comparing matched lines and the limited reaction time pose a risk for tampering and decrease the sensitivity of the sensor, respectively. In this brief, a modification of a CMOS XOR gate is presented, which solves both the aforementioned problems.
Àrees temàtiques de la UPC::Enginyeria electrònica
Metal oxide semiconductors
CMOS integrated circuits logic gates phase detection smart cards Delays Detectors Logic gates Probes Standards Transistors
Metall-òxid-semiconductors
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