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Optimisation of doped microcrystalline silicon films deposited at very low temperatures by Hot-Wire CVD
Voz Sánchez, Cristóbal; Peiró, D.; Bertomeu i Balagueró, Joan; Soler Vilamitjana, David; Fonrodona Turon, Marta; Andreu i Batallé, Jordi
Universitat de Barcelona
In this paper we present new results on doped μc-Si:H thin films deposited by hot-wire chemical vapour deposition (HWCVD) in the very low temperature range (125-275°C). The doped layers were obtained by the addition of diborane or phosphine in the gas phase during deposition. The incorporation of boron and phosphorus in the films and their influence on the crystalline fraction are studied by secondary ion mass spectrometry and Raman spectroscopy, respectively. Good electrical transport properties were obtained in this deposition regime, with best dark conductivities of 2.6 and 9.8 S cm -1 for the p- and n-doped films, respectively. The effect of the hydrogen dilution and the layer thickness on the electrical properties are also studied. Some technological conclusions referred to cross contamination could be deduced from the nominally undoped samples obtained in the same chamber after p- and n-type heavily doped layers.
2013-10-29
Silici
Deposició química en fase vapor
Temperatures baixes
Propietats elèctriques
Pel·lícules fines
Energia solar
Transistors
Bor
Fòsfor
Silicon
Chemical vapor deposition
Low temperatures
Electric properties
Thin films
Solar energy
Transistors
Boron
Phosphorus
(c) Elsevier B.V., 2000
Article
info:eu-repo/semantics/acceptedVersion
Elsevier B.V.
         

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