Title:
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Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate
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Author:
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Fonrodona Turon, Marta; Soler Vilamitjana, David; Escarré i Palou, Jordi; Villar, Fernando; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi; Saboundji, A.; Coulon, N.; Mohammed-Brahim, T.
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Other authors:
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Universitat de Barcelona |
Abstract:
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Amorphous and nanocrystalline silicon films obtained by Hot-Wire Chemical Vapor Deposition have been incorporated as active layers in n-type coplanar top gate thin film transistors deposited on glass substrates covered with SiO 2. Amorphous silicon devices exhibited mobility values of 1.3 cm 2 V - 1 s - 1, which are very high taking into account the amorphous nature of the material. Nanocrystalline transistors presented mobility values as high as 11.5 cm 2 V - 1 s - 1 and resulted in low threshold voltage shift (∼ 0.5 V). |
Subject(s):
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-Transistors -Pel·lícules fines -Silici -Nanocristalls -Deposició química en fase vapor -Transistors -Thin films -Silicon -Nanocrystals -Chemical vapor deposition |
Rights:
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(c) Elsevier B.V., 2006
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Document type:
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Article Article - Accepted version |
Published by:
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Elsevier B.V.
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