Título:
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Microdoping compensation of microcrystalline silicon obtained by Hot-Wire Chemical Vapour Deposition
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Autor/a:
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Voz Sánchez, Cristóbal; Peiró, D.; Fonrodona Turon, Marta; Soler Vilamitjana, David; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi
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Otros autores:
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Universitat de Barcelona |
Abstract:
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Undoped hydrogenated microcrystalline silicon was obtained by hot-wire chemical vapour deposition at different silane-to-hydrogen ratios and low temperature (<300 °C). As well as technological aspects of the deposition process, we report structural, optical and electrical characterizations of the samples that were used as the active layer for preliminary p-i-n solar cells. Raman spectroscopy indicates that changing the hydrogen dilution can vary the crystalline fraction. From electrical measurements an unwanted n-type character is deduced for this undoped material. This effect could be due to a contaminant, probably oxygen, which is also observed in capacitance-voltage measurements on Schottky structures. The negative effect of contaminants on the device was dramatic and a compensated p-i-n structure was also deposited to enhance the cell performance. |
Materia(s):
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-Silici -Nanocristalls -Deposició química en fase vapor -Cèl·lules solars -Silicon -Nanocrystals -Chemical vapor deposition -Solar cells |
Derechos:
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(c) Elsevier B.V., 2000
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Tipo de documento:
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Artículo Artículo - Versión aceptada |
Editor:
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Elsevier B.V.
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Compartir:
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