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Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD
Fonrodona Turon, Marta; Soler Vilamitjana, David; Villar, Fernando; Escarré i Palou, Jordi; Asensi López, José Miguel; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi
Universitat de Barcelona
Hot-Wire Chemical Vapor Deposition has led to microcrystalline silicon solar cell efficiencies similar to those obtained with Plasma Enhanced CVD. The light-induced degradation behavior of microcrystalline silicon solar cells critically depends on the properties of their active layer. In the regime close to the transition to amorphous growth (around 60% of amorphous volume fraction), cells incorporating an intrinsic layer with slightly higher crystalline fraction and [220] preferential orientation are stable after more than 7000 h of AM1.5 light soaking. On the contrary, solar cells whose intrinsic layer has a slightly lower crystalline fraction and random or [111] preferential orientation exhibit clear light-induced degradation effects. A revision of the efficiencies of Hot-Wire deposited microcrystalline silicon solar cells is presented and the potential efficiency of this technology is also evaluated.
Cèl·lules solars
Silici
Deposició química en fase vapor
Energia solar
Solar cells
Silicon
Chemical vapor deposition
Solar energy
(c) Elsevier B.V., 2006
Article
info:eu-repo/semantics/acceptedVersion
Elsevier B.V.
         

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