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| dc.contributor | Universitat de Barcelona |
|---|---|
| dc.contributor.author | Frigeri, Paolo Antonio |
| dc.contributor.author | Nos Aguilà, Oriol |
| dc.contributor.author | Calvo, J. D. |
| dc.contributor.author | Carreras Seguí, Paz |
| dc.contributor.author | Roldán, Rubén |
| dc.contributor.author | Antony, Aldrin |
| dc.contributor.author | Asensi López, José Miguel |
| dc.contributor.author | Bertomeu i Balagueró, Joan |
| dc.date | 2013-10-18T11:43:48Z |
| dc.date | 2019-11-01T06:10:12Z |
| dc.date | 2010 |
| dc.date | 2013-10-18T11:29:34Z |
| dc.identifier.citation | 1862-6351 |
| dc.identifier.citation | 574339 |
| dc.identifier.uri | http://hdl.handle.net/2445/47154 |
| dc.description.abstract | The scaling up of the Hot Wire Chemical Vapor Deposition (HW-CVD) technique to large deposition area can be done using a catalytic net of equal spaced parallel filaments. The large area deposition limit is defined as the limit whenever a further increment of the catalytic net area does not affect the properties of the deposited film. This is the case when a dense catalytic net is spread on a surface considerably larger than that of the film substrate. To study this limit, a system able to hold a net of twelve wires covering a surface of about 20 cm x 20 cm was used to deposit amorphous (a-Si:H) and microcrystalline (μc-Si:H) silicon over a substrate of 10 cm x 10 cm placed at a filament-substrate distance ranging from 1 to 2 cm. The uniformity of the film thickness d and optical constants, n(x, λ) and α(x,¯hω), was studied via transmission measurements. The thin film uniformity as a function of the filament-substrate distance was studied. The experimental thickness profile was compared with the theoretical result obtained solving the diffusion equations. The optimization of the filament-substrate distance allowed obtaining films with inhomogeneities lower than ±2.5% and deposition rates higher than 1 nm/s and 4.5 nm/s for (μc-Si:H) and (a-Si:H), respectively. |
| dc.format | 4 p. |
| dc.format | application/pdf |
| dc.language.iso | eng |
| dc.publisher | Wiley-VCH |
| dc.relation | Versió preprint del document publicat a: http://dx.doi.org/10.1002/pssc.200982827 |
| dc.relation | physica status solidi (c), 2010, vol. 7, num. 3-4, p. 588-591 |
| dc.relation | http://dx.doi.org/10.1002/pssc.200982827 |
| dc.rights | (c) Wiley-VCH, 2010 |
| dc.rights | info:eu-repo/semantics/openAccess |
| dc.subject | Cèl·lules solars |
| dc.subject | Deposició química en fase vapor |
| dc.subject | Silici |
| dc.subject | Pel·lícules fines |
| dc.subject | Solar cells |
| dc.subject | Chemical vapor deposition |
| dc.subject | Silicon |
| dc.subject | Thin films |
| dc.title | Uniformity Study of Amorphous and Microcrystalline Silicon Thin Films Deposited on 10cmx10cm Glass Substrate using Hot Wire CVD Technique |
| dc.type | info:eu-repo/semantics/article |
| dc.type | info:eu-repo/semantics/submittedVersion |
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