Title:
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Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices
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Author:
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Berencén Ramírez, Yonder Antonio; Wutzler, R.; Rebohle, L.; Hiller, D.; Ramírez Ramírez, Joan Manel; Rodríguez, J. A.; Skorupa, Wolfgang; Garrido Fernández, Blas
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Other authors:
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Universitat de Barcelona |
Abstract:
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High optical power density of 0.5 mW/cm2, external quantum efficiency of 0.1%, and population inversion of 7% are reported from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices. Electrical and electroluminescence mechanisms in these devices were investigated. The excitation cross section for the 543 nm Tb3+ emission was estimated under electrical pumping, resulting in a value of 8.2 × 10−14 cm2, which is one order of magnitude larger than one reported for Tb3+:SiO2 light emitting devices. These results demonstrate the potentiality of Tb+-implanted silicon nitride material for the development of integrated light sources compatible with Si technology. |
Subject(s):
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-Díodes -Òptica -Fotònica -Nanotecnologia -Ions -Terres rares -Sílice -Metall-òxid-semiconductors complementaris -Diodes -Optics -Photonics -Nanotechnology -Ions -Rare earths -Silica -Complementary metal oxide semiconductors |
Rights:
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(c) American Institute of Physics , 2013
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Document type:
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Article Article - Published version |
Published by:
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American Institute of Physics
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