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Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices
Berencén Ramírez, Yonder Antonio; Wutzler, R.; Rebohle, L.; Hiller, D.; Ramírez Ramírez, Joan Manel; Rodríguez, J. A.; Skorupa, Wolfgang; Garrido Fernández, Blas
Universitat de Barcelona
High optical power density of 0.5 mW/cm2, external quantum efficiency of 0.1%, and population inversion of 7% are reported from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices. Electrical and electroluminescence mechanisms in these devices were investigated. The excitation cross section for the 543 nm Tb3+ emission was estimated under electrical pumping, resulting in a value of 8.2 × 10−14 cm2, which is one order of magnitude larger than one reported for Tb3+:SiO2 light emitting devices. These results demonstrate the potentiality of Tb+-implanted silicon nitride material for the development of integrated light sources compatible with Si technology.
11-10-2013
Díodes
Òptica
Fotònica
Nanotecnologia
Ions
Terres rares
Sílice
Metall-òxid-semiconductors complementaris
Diodes
Optics
Photonics
Nanotechnology
Ions
Rare earths
Silica
Complementary metal oxide semiconductors
(c) American Institute of Physics , 2013
Artículo
info:eu-repo/semantics/publishedVersion
American Institute of Physics
         

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