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RF performance projections of graphene FETs vs. silicon MOSFETs
Rodriguez Duenas, Saul; Vaziri, Sam; Ostling, Mikael; Rusu, Ana; Alarcón Cot, Eduardo José; Lemme, Max
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. EPIC - Disseny de circuits analògics integrats i de convertidors de potencia conmutats
A graphene field-effect-transistor (GFET) model calibrated with extracted device parameters and a commercial 65 nm silicon MOSFET model are compared with respect to their radio frequency behavior. GFETs slightly lag behind CMOS in terms of speed despite their higher mobility. This is counterintuitive, but can be explained by the effect of a strongly nonlinear voltage-dependent gate capacitance. GFETs achieve their maximum performance only for narrow ranges of VDS and IDS, which must be carefully considered for circuit design. For our parameter set, GFETs require at least μ = 3000 cm2 V−1 s−1 to achieve the same performance as 65 nm silicon MOSFETs.
Peer Reviewed
Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència
Silicon
Power amplifiers
Field-effect transistors
Silici
Amplificadors de potència
Attribution-NonCommercial-NoDerivs 3.0 Spain
http://creativecommons.org/licenses/by-nc-nd/3.0/es/
Article - Esborrany
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