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Carbon nanotube FET process variability and noise model for radiofrequency investigations
Landauer, Gerhard Martin; González Jiménez, José Luis
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
This work focuses on process variability and noise in carbon nanotube field-effect transistors (CNFET) to obtain a compact model usable for radiofrequency (RF) design and simulations. CNFET figures of merit (FoM) are determined and compared to International Technology Roadmap for Semiconductors (ITRS) requirements on conventional analog silicon-based devices. The developed model is also used to investigate on the impact of manufacturing process variability on the CNFET's RF-performance and noise behavior.
Àrees temàtiques de la UPC::Enginyeria electrònica
Nanoelectronics.
Field-effect transistors.
TRANSISTORS INCLUDING NONIDEALITIES
COMPACT SPICE MODEL
PART II
PERFORMANCE
Nanotubs
Transistors d'efecte de camp
Attribution-NonCommercial-NoDerivs 3.0 Spain
http://creativecommons.org/licenses/by-nc-nd/3.0/es/
info:eu-repo/semantics/publishedVersion
info:eu-repo/semantics/conferenceObject
Institute of Electrical and Electronics Engineers (IEEE)
         

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