Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

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RECERCAT Home > Universitat de Barcelona > Física Aplicada > Articles publicats en revistes (Física Aplicada) > View document

To access the full text documents, please follow this link: http://hdl.handle.net/2445/34662

dc.contributor	Universitat de Barcelona
dc.contributor.author	Kail, F.
dc.contributor.author	Farjas Silva, Jordi
dc.contributor.author	Roura Grabulosa, Pere
dc.contributor.author	Secouard, C.
dc.contributor.author	Nos Aguilà, Oriol
dc.contributor.author	Bertomeu i Balagueró, Joan
dc.contributor.author	Alzina Sureda, Francesc
dc.contributor.author	Roca i Cabarrocas, P. (Pere)
dc.date	2013-04-19T10:51:54Z
dc.date	2013-04-19T10:51:54Z
dc.date	2010
dc.date	2013-04-19T10:51:54Z
dc.identifier.citation	0003-6951
dc.identifier.citation	579121
dc.identifier.uri	http://hdl.handle.net/2445/34662
dc.format	3 p.
dc.format	application/pdf
dc.language.iso	eng
dc.publisher	American Institute of Physics
dc.relation	Reproducció del document publicat a: http://dx.doi.org/10.1063/1.3464961
dc.relation	Applied Physics Letters, 2010, vol. 97, num. 3, p. 031918-1-031918-3
dc.relation	http://dx.doi.org/10.1063/1.3464961
dc.rights	(c) American Institute of Physics , 2010
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Semiconductors amorfs
dc.subject	Calorimetria
dc.subject	Hidrogen
dc.subject	Silici
dc.subject	Espectroscòpia Raman
dc.subject	Amorphous semiconductors
dc.subject	Calorimetry
dc.subject	Hydrogen
dc.subject	Silicon
dc.subject	Raman spectroscopy
dc.title	Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments
dc.type	info:eu-repo/semantics/article
dc.type	info:eu-repo/semantics/publishedVersion
dc.description.abstract	The structural relaxation of pure amorphous silicon a-Si and hydrogenated amorphous silicon a-Si:H materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon.

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