To access the full text documents, please follow this link: http://hdl.handle.net/2445/34662

Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments
Kail, F.; Farjas Silva, Jordi; Roura Grabulosa, Pere; Secouard, C.; Nos Aguilà, Oriol; Bertomeu i Balagueró, Joan; Alzina Sureda, Francesc; Roca i Cabarrocas, P. (Pere)
Universitat de Barcelona
Semiconductors amorfs
Calorimetria
Hidrogen
Silici
Espectroscòpia Raman
Amorphous semiconductors
Calorimetry
Hydrogen
Silicon
Raman spectroscopy
(c) American Institute of Physics , 2010
Article
info:eu-repo/semantics/publishedVersion
American Institute of Physics
         

Show full item record

Related documents

Other documents of the same author

Kail, F.; Farjas Silva, Jordi; Roura Grabulosa, Pere; Secouard, C.; Nos Aguilà, Oriol; Bertomeu i Balagueró, Joan; Roca i Cabarrocas, P. (Pere)
Rath, Chandana; Farjas Silva, Jordi; Roura Grabulosa, Pere; Kail, F.; Roca i Cabarrocas, P. (Pere); Bertrán Serra, Enric
Roura Grabulosa, Pere; Farjas Silva, Jordi; Rath, Chandana; Serra-Miralles, J.; Bertrán Serra, Enric; Roca i Cabarrocas, P. (Pere)
Farjas Silva, Jordi; Serra-Miralles, J.; Roura Grabulosa, Pere; Bertrán Serra, Enric; Roca i Cabarrocas, P. (Pere)
Antony, Aldrin; Carreras Seguí, Paz; Keitzl, Thomas; Roldán, Rubén; Nos Aguilà, Oriol; Frigeri, Paolo Antonio; Asensi López, José Miguel; Bertomeu i Balagueró, Joan
 

Coordination

 

Supporters