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dc.contributor | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
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dc.contributor | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.contributor.author | Martín García, Isidro |
dc.contributor.author | Colina Brito, Mónica Alejandra |
dc.contributor.author | Orpella García, Alberto |
dc.contributor.author | Voz Sánchez, Cristóbal |
dc.contributor.author | De Vecchi, S. |
dc.contributor.author | Desrues, T. |
dc.contributor.author | Abolmasov, S. |
dc.contributor.author | Roca i Cabarrocas, P. |
dc.contributor.author | Alcubilla González, Ramón |
dc.date | 2012 |
dc.identifier.citation | Martin, I. [et al.]. Low recombination n+ regions created by n+ c-Si epitaxial layers and laser processing of phosphorus-doped SiCx films. A: European Photovoltaic Solar Energy Conference and Exhibition. "27th European Photovoltaic Solar Energy Conference and Exhibition: proceedings". Frankfurt: 2012, p. 1519-1523. |
dc.identifier.uri | http://hdl.handle.net/2117/17662 |
dc.language.iso | eng |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica |
dc.subject | Photovoltaic power generation |
dc.subject | Energia solar fotovoltaica |
dc.title | Low recombination n+ regions created by n+ c-Si epitaxial layers and laser processing of phosphorus-doped SiCx films |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.type | info:eu-repo/semantics/conferenceObject |