Para acceder a los documentos con el texto completo, por favor, siga el siguiente enlace: http://hdl.handle.net/2445/32769
dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Gacevic, Zarko |
dc.contributor.author | Fernández-Garrido, S. |
dc.contributor.author | Rebled, J. M. (José Manuel) |
dc.contributor.author | Estradé Albiol, Sònia |
dc.contributor.author | Peiró Martínez, Francisca |
dc.contributor.author | Calleja Pardo, Enrique |
dc.date | 2012-11-20T15:47:34Z |
dc.date | 2012-11-20T15:47:34Z |
dc.date | 2011 |
dc.date | 2012-11-20T15:47:34Z |
dc.identifier.citation | 0003-6951 |
dc.identifier.citation | 597577 |
dc.identifier.uri | http://hdl.handle.net/2445/32769 |
dc.format | 4 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | Reproducció del document publicat a: https://doi.org/10.1063/1.3614434 |
dc.relation | Applied Physics Letters, 2011, vol. 99, p. 031103-1-031103-3 |
dc.relation | https://doi.org/10.1063/1.3614434 |
dc.rights | (c) American Institute of Physics , 2011 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Optoelectrònica |
dc.subject | Semiconductors |
dc.subject | Estructura cristal·lina (Sòlids) |
dc.subject | Indi (Metall) |
dc.subject | Optoelectronics |
dc.subject | Semiconductors |
dc.subject | Layer structure (Solids) |
dc.subject | Indium |
dc.title | High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.description.abstract |