Título:
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Optical absorption of radio frequency sputtered GaAs(Ti) films
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Autor/a:
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Boronat, A; Silvestre Bergés, Santiago; Fuertes Marrón, D.; Castañer Muñoz, Luis María; Martí, A.; Luque, Antonio
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Otros autores:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
Abstract:
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Composition and optical absorption of thin films
of GaAs(Ti) and GaAs, deposited by sputtering on glass
substrates under different process conditions, have been
investigated. The thin films obtained are typically 200 nm
thick. ToF–SIMS measurements show a quite constant
concentration and good uniformity of Ti profiles along the
GaAs(Ti) layers in all cases and EPMA results indicate that
Ti content increases with the substrate temperature in the
sputtering process. Measurements of the transmittance and
reflectance spectra of the GaAs and GaAs(Ti) thin films have
been carried out. In the optical characterization of the films it
is found that optical absorption is enhanced in all samples
containing Ti. The determination of the optical gap from the
optical absorption, shows optical gap variations from 1.15 to
1.29 eV in the GaAs thin films, and from 0.83 to 1.13 eV in
the GaAs(Ti) thin films. The differences in absorption and
EgTAUC observed between samples of GaAs and GaAs(Ti)
are consistent with the presence of an intermediate band. |
Abstract:
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Peer Reviewed |
Materia(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica -Àrees temàtiques de la UPC::Enginyeria dels materials -Materials--Electric properties -Materials--Propietats elèctriques |
Derechos:
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Tipo de documento:
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Artículo - Versión publicada Artículo |
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