Spectroscopic ellipsometry study of the In1-x Gax Asy P1-y / InP Heterojunctions grown by metalorganic chemical-vapor deposition

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RECERCAT Home > Universitat de Barcelona > Física Aplicada > Articles publicats en revistes (Física Aplicada) > View document

To access the full text documents, please follow this link: http://hdl.handle.net/2445/32230

dc.contributor	Universitat de Barcelona
dc.contributor.author	Drévillon, B.
dc.contributor.author	Bertran Serra, Enric
dc.contributor.author	Alnot, P.
dc.contributor.author	Olivier, J.
dc.contributor.author	Razeghi, M.
dc.date	2012-10-09T08:43:25Z
dc.date	2012-10-09T08:43:25Z
dc.date	1986
dc.date	2012-10-09T08:43:25Z
dc.identifier.citation	0021-8979
dc.identifier.citation	004363
dc.identifier.uri	http://hdl.handle.net/2445/32230
dc.format	7 p.
dc.format	application/pdf
dc.language.iso	eng
dc.publisher	American Institute of Physics
dc.relation	Reproducció del document publicat a: http://dx.doi.org/10.1063/1.337603
dc.relation	Journal of Applied Physics, 1986, vol. 60, num. 10, p. 3512-3518
dc.relation	http://dx.doi.org/10.1063/1.337603
dc.rights	(c) American Institute of Physics , 1986
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Pel·lícules fines
dc.subject	El·lipsometria
dc.subject	Thin films
dc.subject	Ellipsometry
dc.title	Spectroscopic ellipsometry study of the In1-x Gax Asy P1-y / InP Heterojunctions grown by metalorganic chemical-vapor deposition
dc.type	info:eu-repo/semantics/article
dc.type	info:eu-repo/semantics/publishedVersion
dc.description.abstract	The dielectric functions of InP, In0.53Ga0.47As, and In0.75Ga0.25As0.5P0.5 epitaxial layers have been measured using a polarization modulation spectroscopic ellipsometer in the 1.5 to 5.3 eV region. The oxide removal procedure has been carefully checked by comparing spectroscopic ellipsometry and x ray photoelectron spectroscopy measurements. These reference data have been used to investigate the structural nature of metalorganic chemical vapor deposition grown In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP heterojunctions, currently used for photodiodes and laser diodes. The sharpness of the interfaces has been systematically compared for the two types of heterojunctions: In1 xGaxAsy/InP and InP/In1 xGaxAsyP1 y. The sharpest interface is obtained for InP growth on In0.75Ga0.25As0.5P0.5 where the interface region is estimated to be (10±10) Å thick. The importance of performing in situ SE measurements is emphasized.

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