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Blue-green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures
Berencén Ramírez, Yonder Antonio; Jambois, Olivier; Ramírez Ramírez, Joan Manel; Rebled, J. M. (José Manuel); Estradé Albiol, Sònia; Peiró Martínez, Francisca; Domínguez, Carlos (Domínguez Horna); Rodríguez, J. A.; Garrido Fernández, Blas
Universitat de Barcelona
Blue green to near-IR switching electroluminescence (EL) has been achieved in a metal-oxide-semiconductor light emitting device, where the dielectric has been replaced by a Si-rich silicon oxide/nitride bilayer structure. To form Si nanostructures, the layers were implanted with Si ions at high energy, resulting in a Si excess of 19%, and subsequently annealed at 1000 °C. Transmission electron microscopy and EL studies allowed ascribing the blue-green emission to the Si nitride related defects and the near-IR band with the emission of the Si-nanoclusters embedded into the SiO2 layer. Charge transport analysis is reported and allows for identifying the origin of this twowavelength switching effect.
Microelectrònica
Metall-òxid-semiconductors
Luminescència
Optoelectrònica
Microelectronics
Metal oxide semiconductors
Luminescence
Optoelectronics
(c) Optical Society of America, 2011
Article
info:eu-repo/semantics/publishedVersion
Optical Society of America
         

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