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dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Jambois, Olivier |
dc.contributor.author | Berencén Ramírez, Yonder Antonio |
dc.contributor.author | Hijazi, K. |
dc.contributor.author | Wojdak, M. |
dc.contributor.author | Kenyon, Anthony J. |
dc.contributor.author | Gourbilleau, F. |
dc.contributor.author | Rizk, Richard |
dc.contributor.author | Garrido Fernández, Blas |
dc.date | 2012-10-05T09:24:18Z |
dc.date | 2012-10-05T09:24:18Z |
dc.date | 2009 |
dc.date | 2012-10-05T09:24:18Z |
dc.identifier.citation | 0021-8979 |
dc.identifier.citation | 585166 |
dc.identifier.uri | http://hdl.handle.net/2445/32209 |
dc.format | 1 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | Reproducció del document publicat a: http://doi.org/10.1063/1.3213386 |
dc.relation | Journal of Applied Physics, 2009, vol. 106, p. 063526-1-063526-6 |
dc.relation | http://doi.org/10.1063/1.3213386 |
dc.relation | info:eu-repo/grantAgreement/EC/FP6/033574/EU//LANCER |
dc.rights | (c) American Institute of Physics , 2009 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Metall-òxid-semiconductors |
dc.subject | Luminescència |
dc.subject | Propietats òptiques |
dc.subject | Optoelectrònica |
dc.subject | Metal oxide semiconductors |
dc.subject | Luminescence |
dc.subject | Optical properties |
dc.subject | Optoelectronics |
dc.title | Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions. |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.description.abstract |