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Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions.
Jambois, Olivier; Berencén Ramírez, Yonder Antonio; Hijazi, K.; Wojdak, M.; Kenyon, Anthony J.; Gourbilleau, F.; Rizk, Richard; Garrido Fernández, Blas
Universitat de Barcelona
Metall-òxid-semiconductors
Luminescència
Propietats òptiques
Optoelectrònica
Metal oxide semiconductors
Luminescence
Optical properties
Optoelectronics
(c) American Institute of Physics , 2009
Article
info:eu-repo/semantics/publishedVersion
American Institute of Physics
         

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