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Gated Geiger mode avalanche photodiode pixels with integrated readout electronics for low noise photon detection
Vilella Figueras, Eva; Comerma Montells, Albert; Alonso Casanovas, Oscar; Gascón Fora, David; Diéguez Barrientos, Àngel
Universitat de Barcelona
Avalanche photodiodes operated in the Geiger mode offer a high intrinsic gain as well as an excellent timing accuracy. These qualities make the sensor specially suitable for those applications where detectors with high sensitivity and low timing uncertainty are required. Moreover, they are compatible with standard CMOS technologies, allowing sensor and front-end electronics integration within the pixel cell. However, the sensor suffers from high levels of intrinsic noise, which may lead to erroneous results and limit the range of detectable signals. They also increase the amount of data that has to be stored. In this work, we present a pixel based on a Geiger-mode avalanche photodiode operated in the gated mode to reduce the probability to detect noise counts interfering with photon arrival events. The readout circuit is based on a two grounds scheme to enable low reverse bias overvoltages and consequently lessen the dark count rate. Experimental characterization of the fabricated pixel with the HV-AMS 0.35µm standard technology is also presented in this article.
2012-08-31
Metall-òxid-semiconductors complementaris
Soroll electrònic
Complementary metal oxide semiconductors
Electronic noise
(c) Elsevier B.V., 2011
Article
info:eu-repo/semantics/acceptedVersion
Elsevier B.V.
         

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Vilella Figueras, Eva; Arbat Casas, Anna; Comerma Montells, Albert; Trenado, J. (Juan); Alonso Casanovas, Oscar; Gascón Fora, David; Vilà i Arbonès, Anna Maria; Garrido Beltrán, Lluís; Diéguez Barrientos, Àngel
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