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Readout electronics for low dark count pixel detectors based on geiger mode avalanche photodiodes fabricated in conventional CMOS technologies for future linear colliders
Vilella Figueras, Eva; Arbat Casas, Anna; Comerma Montells, Albert; Trenado, J. (Juan); Alonso Casanovas, Oscar; Gascón Fora, David; Vilà i Arbonès, Anna Maria; Garrido Beltrán, Lluís; Diéguez Barrientos, Àngel
Universitat de Barcelona
The high sensitivity and excellent timing accuracy of Geiger mode avalanche photodiodes makes them ideal sensors as pixel detectors for particle tracking in high energy physics experiments to be performed in future linear colliders. Nevertheless, it is well known that these sensors suffer from dark counts and afterpulsing noise, which induce false hits (indistinguishable from event detection) as well as an increase of the necessary area of the readout system. In this work, we present a comparison between APDs fabricated in a high voltage 0.35 µm and a high integration 0.13 µm commercially available CMOS technologies that has been performed to determine which of them best fits the particle collider requirements. In addition, a readout circuit that allows low noise operation is introduced. Experimental characterization of the proposed pixel is also presented in this work.
Detectors
Metall-òxid-semiconductors complementaris
Física nuclear
Electrònica
Col·lisions (Física nuclear)
Detectors
Complementary metal oxide semiconductors
Nuclear physics
Electronics
Collisions (Nuclear physics)
(c) Elsevier B.V., 2010
Artículo
info:eu-repo/semantics/acceptedVersion
Elsevier B.V.
         

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