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Optical measurements on GaAs(Ti) thin films sputtered on GaAs
Boronat Moreiro, Alfredo; Silvestre Bergés, Santiago; Castañer Muñoz, Luis María
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
Some sputtering processes of GaAs(Ti) onto c-GaAs have been carried out in order to obtain thin films as candidates to be intermediate band photovoltaic materials. This work presents the results obtained in the study of the absorptance, from transmittance and reflectance responses, in samples obtained at different conditions of temperature and power during the sputtering deposition.
Peer Reviewed
Àrees temàtiques de la UPC::Enginyeria electrònica i telecomunicacions::Telecomunicació òptica::Fotònica
Temperature measurements
Gallium arsenide
Termometria
Arseniür de gal·li
Attribution-NonCommercial-NoDerivs 3.0 Spain
http://creativecommons.org/licenses/by-nc-nd/3.0/es/
info:eu-repo/semantics/publishedVersion
info:eu-repo/semantics/conferenceObject
         

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