Study of GaAs(Ti) thin films as candidates for IB solar cells manufacturing

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To access the full text documents, please follow this link: http://hdl.handle.net/2117/10914

dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.contributor.author	Silvestre Bergés, Santiago
dc.contributor.author	Boronat, A.
dc.contributor.author	Castañer Muñoz, Luis María
dc.date	2010
dc.identifier.citation	Silvestre, S.; Boronat, A.; Castañer, L. Study of GaAs(Ti) thin films as candidates for IB solar cells manufacturing. A: IEEE Photovoltaic Specialists Conference. "35th IEEE photovoltaic specialists conference ( PVSC)". Honolulu, Hawai: IEEE Press. Institute of Electrical and Electronics Engineers, 2010, p. 1210-1212.
dc.identifier.citation	978-1-4244-5892-9
dc.identifier.uri	http://hdl.handle.net/2117/10914
dc.language.iso	eng
dc.publisher	IEEE Press. Institute of Electrical and Electronics Engineers
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Enginyeria electrònica
dc.subject	Solar cells
dc.subject	Electronic engineering
dc.subject	X-ray diffraction
dc.subject	Enginyeria electrònica
dc.subject	Energia solar
dc.title	Study of GaAs(Ti) thin films as candidates for IB solar cells manufacturing
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/conferenceObject
dc.description.abstract	Thin films of GaAs(Ti) have been deposited by sputtering on glass and n_GaAs substrates under different process conditions. Optical characteristics of these samples have been analyzed to study the potential of this material in intermediate Band solar cell manufacturing.

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